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Irradiation-induced metal-like nanoinclusions’ influence on silicon conductivity

Pagava, T. and Maisuradze, N. and Beridze, M. and Kharshiladze, N. (2011) Irradiation-induced metal-like nanoinclusions’ influence on silicon conductivity. Nano Studies, 3 . pp. 169-176. ISSN 1987-8826

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Abstract

n-Si single crystals produced by the floating zone method are studied. The concentration of electrons in the crystals is 6*10^13 cm^–3. The samples are irradiated with 25 MeV protons at 300 K. The irradiation dose is varied in the range (1.8 – 8.1)*10^12 cm^–2. The measurements are carried out by means of the Hall technique in the range of temperatures T = 77 – 300 K. In samples irradiated with different proton doses, a sharp increase in the experimental effective Hall mobility μ_eff or a deep minimum in the dependence μ_eff = f(T) in the region of phonon scattering of electrons is observed immediately after irradiation or after aging of the samples, respectively. The observed effect is attributed to the formation of high-conductivity – metal-like) – inclusions in the irradiated samples and to changes in the degree of screening of the inclusions by impurity–defect shells in relation to the irradiation dose, the time of natural aging, and the temperature of measurements. The impurity–defect shells are formed around metal-like inclusions during isochronal annealing or natural aging of the irradiated samples. It is suggested that metal-like inclusions formed in the n-Si crystals on irradiation with protons with the energy 25 MeV are atomic nanoclusters with an 80 nm radius.

Item Type:Article
Subjects:Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:11628
Deposited By:Professor Levan Chkhartishvili
Deposited On:04 Jan 2012 20:47
Last Modified:04 Jan 2012 20:47

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