Lu, Shulong and Ji, Lian and He, Wei and Dai, Pan and Yang, Hui and Arimochi, Masayuki and Yoshida, Hiroshi and Uchida, Shiro and Ikeda, Masao (2011) High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy. NANOSCALE RESEARCH LETTERS, 6 (1). pp. 1-4. ISSN 1931-7573 (Print) 1556-276X (Online)
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Official URL: http://www.nanoscalereslett.com/content/6/1/576
We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell.
|Subjects:||Technology > Nanotechnology and energy applications|
Analytical Science > Beam methods
|Deposited By:||M T V|
|Deposited On:||05 Jan 2012 09:56|
|Last Modified:||05 Jan 2012 09:56|
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