Niu, Lang and Hao, Zhibiao and Hu, Jiannan and Hu, Yibin and Wang, Lai and Luo, Yi (2011) Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control. NANOSCALE RESEARCH LETTERS, 6 (1). pp. 1-6. ISSN 1931-7573 (Print) 1556-276X (Online)
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Official URL: http://www.nanoscalereslett.com/content/6/1/611
The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an AlN spacer layer is inserted before the growth of GaN QDs. GaN/AlN QD samples with the proposed structure are grown by molecular beam epitaxy. The results show that by choosing a proper AlN spacer thickness to control the strain in GaN QDs, the internal quantum efficiencies have been improved from 30.7% to 66.5% and from 5.8% to 13.5% for QDs emitting violet and green lights, respectively.
|Subjects:||Material Science > Nanofabrication processes and tools|
|Deposited By:||M T V|
|Deposited On:||05 Jan 2012 10:50|
|Last Modified:||05 Jan 2012 10:50|
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