Xu, Wen-ting and Tu, Hai-ling and Liu, Da-li and Teng, Ran and Xiao, Qing-hua and Chang, Qing (2011) Visible photoluminescence of nanometer-sized SiGe/Si heterostructure fabricated by ion implantation. Journal of Nanoparticle Research, 13 (12). pp. 7095-7098.
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An innovative fabrication technique for the nanometer-sized SiGe/Si heterostructure was developed in this study. Ge was induced in Si substrate by two-step ion implantation. The spherical SiGe nanoclusters are self-assembled in the Si substrate by subsequent rapid thermal annealing at 1,100 °C. The diameter of the spherical SiGe nanoclusters is 5–7 nm. Visible photoluminescence from this nanometer-sized SiGe/Si heterostructure at room temperature was investigated. We found three peak energies of visible luminescence spectra at 1.97, 2.13, and 2.16 eV, respectively. The luminescence intensity depends on the number of the nanoclusters and will be decreased because of the micro-defects around the heterostructure, which is discussed in detail.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||05 Jan 2012 09:29|
|Last Modified:||05 Jan 2012 09:42|
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