Nano Archive

Lower reflectivity and higher minority carrier lifetime of hand-tailored porous silicon

Nansheng, Zhang and Zhongquan, Ma and Chengyue, Zhou and Bo, He (2009) Lower reflectivity and higher minority carrier lifetime of hand-tailored porous silicon. Journal of Semiconductors, 30 (7). 072004.

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL: http://stacks.iop.org/1674-4926/30/i=7/a=072004

Abstract

Solar cell grade crystalline silicon with very low reflectivity has been obtained by electrochemically selective erosion. The porous silicon (PS) structure with a mixture of nano- and micro-crystals shows good antireflection properties on the surface layer, which has potential for application in commercial silicon photovoltaic devices after optimization. The morphology and reflectivity of the PS layers are easily modulated by controlling the electrochemical formation conditions (i.e., the current density and the anodization time). It has been shown that much a lower reflectivity of approximately 1.42% in the range 380–1100 nm is realized by using optimized conditions. In addition, the minority carrier lifetime of the PS after removing the phosphorus silicon layer is measured to be ~3.19 μs. These values are very close to the reflectivity and the minority carrier lifetime of Si 3 N 4 as a passivation layer on a bulk silicon-based solar cell (0.33% and 3.03 μs, respectively).

Item Type:Article
ID Code:11350
Deposited By:Prof. Alexey Ivanov
Deposited On:02 Nov 2011 00:10
Last Modified:02 Nov 2011 00:47

Repository Staff Only: item control page