SÃ¶kmen, Ã and Stranz, A and FÃ¼ndling, S and Wehmann, H-H and Bandalo, V and Bora, A and Tornow, M and Waag, A and Peiner, E (2009) Capabilities of ICP-RIE cryogenic dry etching of silicon: review of exemplary microstructures. Journal of Micromechanics and Microengineering, 19 (10). p. 105005.
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Official URL: http://stacks.iop.org/0960-1317/19/i=10/a=105005
Inductively coupled plasma (ICP) cryogenic dry etching was used to etch submicron pores, nano contact lines, submicron diameter pillars, thin and thick cantilevers, membrane structures and anisotropic deep structures with high aspect ratios in silicon for bio-nanoelectronics, optoelectronics and nano-micro electromechanical systems (NMEMS). The ICP cryogenic dry etching gives us the advantage of switching plasmas between etch rates of 13 nm min â1 and 4 Âµm min â1 for submicron pores and for membrane structures, respectively. A very thin photoresist mask can endure at â75 Â°C even during etching 70 Âµm deep for cantilevers and 300 Âµm deep for membrane structures. Coating the backsides of silicon membrane substrates with a thin photoresist film inhibited the lateral etching of cantilevers during their front release. Between â95 Â°C and â140 Â°C, we realized crystallographic-plane-dependent etching that creates facets only at the etch profile bottom. By varying the oxygen content and the process temperature, we achieved good control over the shape of the etched structures. The formation of black silicon during membrane etching down to 300 Âµm was delayed by reducing the oxygen content.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||02 Nov 2011 00:23|
|Last Modified:||02 Nov 2011 00:47|
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