AlemÃ¡n, B and Hidalgo, P and FernÃ¡ndez, P and Piqueras, J (2009) Thermal growth and cathodoluminescence of Bi doped ZnO nanowires and rods. Journal of Physics D: Applied Physics, 42 (22). p. 225101.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://stacks.iop.org/0022-3727/42/i=22/a=225101
Bi doped ZnO nanowires and rods have been grown by a catalyst free evaporationâdeposition method with precursors containing either ZnO and Bi 2 O 3 or ZnS and Bi 2 O 3 powders. The use of ZnS as a precursor was found to lead to a higher density of nano- and microstructures at lower temperatures than by using ZnO. Energy dispersive x-ray spectroscopy (EDS) shows that the Bi content in the wires and rods is in the range 0.15â0.35 at%. Bi incorporation was found to induce a red shift of the near band gap luminescence but no quantitative correlation between the shift and the amount of Bi, as measured by EDS, was observed. The I â V curves of single Bi doped wires had linear behaviour at low current and non-linear behaviour for high currents, qualitatively similar to that of undoped wires.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||01 Nov 2011 23:31|
|Last Modified:||02 Nov 2011 00:47|
Repository Staff Only: item control page