Xiang-Bing, Sun and Lin, Feng and Xian-Wei, Jiao (2011) Photoluminescence spectroscopy of defects in ZnO nano/microwires. Chinese Physics B, 20 (6). 067804.
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Official URL: http://stacks.iop.org/1674-1056/20/i=6/a=067804
Photoluminescence spectroscopy is used to study defects found in single ZnO nano/microwires at 90 K. The defect, acting as binding site for bound exciton (BX) transition, is represented by B F , the fractional intensity of the BX peak in the whole near-band edge ultraviolet (UV) luminescence. The concentration of defects as origins of the visible emissions is proportional to the intensity fraction D F , i.e., the intensity fraction of visible emissions in the sum total of all UV and visible luminescences. By comparing B F and D F , it is concluded that the two defects are not correlated to each other. The former kind of defect is considered to be related to the blueshift of the near-band edge peak as the radius of the nano/microwires decreases at room temperature.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||01 Nov 2011 23:30|
|Last Modified:||02 Nov 2011 00:47|
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