Khalaj, Z. and Ghoranneviss, M. and Nasirilaheghi, S. and Ghorannevis, Z. and Hatakeyama, R. (2010) Growth of Nano Crystalline Diamond on Silicon Substrate Using Different Etching Gases by HFCVD. Chinese Journal of Chemical Physics, 23 (6). p. 689.
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Official URL: http://stacks.iop.org/1674-0068/23/i=6/a=14
We investigate the effects of etching gases on the synthesis of nano crystalline diamonds grown on silicon substrate at the substrate temperature of 550Â°C and the reaction pressure of 4 kPa by hot filament chemical vapor deposition method, in which CH 4 and H 2 act as a source and diluting gases, respectively. N 2 , H 2 , and NH 3 were used as the etching gases, respectively. Results show that the optimum conditions can be obtained only for the case of H 2 gas. The crystal morphology and crystallinity of the samples have been examined by scanning electron microscopy and X-ray diffraction, respectively.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||01 Nov 2011 23:25|
|Last Modified:||02 Nov 2011 00:47|
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