Tapily, K and Gu, D and Baumgart, H and Namkoong, G and Stegall, D and Elmustafa, A A (2011) Mechanical and structural characterization of atomic layer deposition-based ZnO films. Semiconductor Science and Technology, 26 (11). p. 115005.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://stacks.iop.org/0268-1242/26/i=11/a=115005
Zinc oxide thin films were deposited by atomic layer deposition (ALD). The structural and mechanical properties of the thin films were investigated by x-ray diffraction, transmission electron microscopy, atomic force microscopy, and nanoindentation. Diethyl zinc was used as the chemical precursor for zinc and water vapor was used as the oxidation agent. The samples were deposited at 150 Â°C and at a pressure of 2.1 Ã 10 â1 Torr in the ALD reactor. A growth rate of 2 Ã per cycle was calculated in the ALD process window. The Nano Indenter XP was used in conjunction with the continuous stiffness method in depth control mode in order to measure and to analyze the mechanical properties of hardness and modulus of ALD ZnO thin film samples. For comparison, we benchmarked the mechanical properties of single crystal bulk ZnO samples against those of our ALD ZnO thin films.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||01 Nov 2011 23:21|
|Last Modified:||02 Nov 2011 00:47|
Repository Staff Only: item control page