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Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNyand SiO2 films

Jacques, Emmanuel and Pichon, Laurent and Debieu, Olivier and Gourbilleau, Fabrice (0201) Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOxNyand SiO2 films. Nanoscale Research Letters, 6 (1). pp. 1-6.

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Official URL: http://www.nanoscalereslett.com/content/6/1/170

Abstract

We examined and compared the electrical properties of silica (SiO2) and silicon oxynitride (SiOxNy) layers embedding silicon nanoclusters (Sinc) integrated in metal-insulator-semiconductor (MIS) devices. The technique used for the deposition of such layers is the reactive magnetron sputtering of a pure SiO2 target under a mixture of hydrogen/argon plasma in which nitrogen is incorporated in the case of SiOxNylayer. Al/SiOxNy-Sinc/p-Si and Al/SiO2-Sinc/p-Si devices were fabricated and electrically characterized. Results showed a high rectification ratio (>104) for the SiOxNy-based device and a resistive behavior when nitrogen was not incorporating (SiO2-based device). For rectifier devices, the ideality factor depends on the SiOxNylayer thickness. The conduction mechanisms of both MIS diode structures were studied by analyzing thermal and bias dependences of the carriers transport in relation with the nitrogen content.

Item Type:Article
Subjects:Physical Science > Nanophysics
Material Science > Nanostructured materials
Material Science > Nanochemistry
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:10976
Deposited By:JNCASR
Deposited On:16 Jul 2011 05:01
Last Modified:16 Jul 2011 05:01

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