Khomenkova, Larysa and Sahu, Bhabani S and Slaoui, Abdelilah and Gourbilleau, Fabrice (2011) Hf-based high-k materials for Si nanocrystal floating gate memories. Nanoscale Research Letters, 6 (1). pp. 1-8.
Official URL: http://www.nanoscalereslett.com/content/6/1/172
Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO2 active layers were used as charge storage layers, and their properties were studied versus deposition conditions and annealing treatment. The capacitance-voltage measurements were performed to study the charge trapping characteristics of these structures. It was shown that with specific deposition conditions and annealing treatment, a large memory window of about 6.8 V is achievable at a sweeping voltage of Â± 6 V, indicating the utility of these stack structures for low-operating-voltage nonvolatile memory devices.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||16 Jul 2011 05:01|
|Last Modified:||16 Jul 2011 05:01|
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