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Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

Jo, Masafumi and Duan, Guotao and Mano, Takaaki and Sakoda, Kazuaki (2011) Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells. Nanoscale Research Letters, 6 (1). pp. 1-4.

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Official URL: http://www.springerlink.com/content/a0x72x66746271...

Abstract

We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350°C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200°C-capped sample.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Quantum phenomena
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:10972
Deposited By:JNCASR
Deposited On:30 May 2011 12:44
Last Modified:30 May 2011 12:44

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