Jo, Masafumi and Duan, Guotao and Mano, Takaaki and Sakoda, Kazuaki (2011) Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells. Nanoscale Research Letters, 6 (1). pp. 1-4.
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Official URL: http://www.springerlink.com/content/a0x72x66746271...
Abstract
We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350°C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200°C-capped sample.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanophysics Physical Science > Quantum phenomena |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics |
| ID Code: | 10972 |
| Deposited By: | JNCASR |
| Deposited On: | 30 May 2011 12:44 |
| Last Modified: | 30 May 2011 12:44 |
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