Frigeri, Cesare and Serenyi , M and Khanh, N Q and Csik, Attila and Riesz, Ferenc and Erdelyi, Z and Nasi, Lucia and Beke, D L and Boyen, Hans-Gerd (2011) Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers. Nanoscale Research Letters, 6 (1). pp. 1-6.
Official URL: http://www.nanoscalereslett.com/content/6/1/189
Hydrogenated multilayers (MLs) of a-Si/a-Ge have been analysed to establish the reasons of H release during annealing that has been seen to bring about structural modifications even up to well-detectable surface degradation. Analyses carried out on single layers of a-Si and a-Ge show that H is released from its bond to the host lattice atom and that it escapes from the layer much more efficiently in a-Ge than in a-Si because of the smaller binding energy of the H-Ge bond and probably of a greater weakness of the Ge lattice. This should support the previous hypothesis that the structural degradation of a-Si/a-Ge MLs primary starts with the formation of H bubbles in the Ge layers.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||16 Jul 2011 05:42|
|Last Modified:||16 Jul 2011 05:42|
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