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Multiscale investigation of graphene layers on 6H-SiC(000-1)

Tiberj, Antoine and Huntzinger, Jean-Roch and Camassel, Jean and Hiebel, Fanny and Mahmood, Ather and Mallet, Pierre and Naud, Cecile and Veuillen, Jean-Yves (2011) Multiscale investigation of graphene layers on 6H-SiC(000-1). Nanoscale Research Letters, 6 (1). pp. 1-8.


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In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultrahigh vacuum (UHV) conditions is presented. At 100-μm scale, the authors show that the UHV growth yields few layer graphene (FLG) with an average thickness given by Auger spectroscopy between 1 and 2 graphene planes. At the same scale, electron diffraction reveals a significant rotational disorder between the first graphene layer and the SiC surface, although well-defined preferred orientations exist. This is confirmed at the nanometer scale by scanning tunneling microscopy (STM). Finally, STM (at the nm scale) and Raman spectroscopy (at the μm scale) show that the FLG stacking is turbostratic, and that the domain size of the crystallites ranges from 10 to 100 nm. The most striking result is that the FLGs experience a strong compressive stress that is seldom observed for graphene grown on the C face of SiC substrates.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:10963
Deposited By:JNCASR
Deposited On:16 Jul 2011 05:42
Last Modified:16 Jul 2011 05:42

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