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Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods

Frigeri, Cesare and Shakhmin, Alexey Aleksandrovich and Vinokurov, Anatolievich Dmitry and Zamoryanskaya, Vladimirovna Maria (2011) Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods. Nanoscale Research Letters, 6 (1). pp. 1-7.

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Official URL: http://www.nanoscalereslett.com/content/6/1/194

Abstract

Electron beam methods, such as cathodoluminescence (CL) that is based on an electron-probe microanalyser, and (200) dark field and high angle annular dark field (HAADF) in a scanning transmission electron microscope, are used to study the deterioration of interfaces in InGaP/GaAs system with the GaAs QW on top of InGaP. A CL emission peak different from that of the QW was detected. By using HAADF, it is found that the GaAs QW does not exist any longer, being replaced by extra interlayer(s) that are different from GaAs and InGaP because of atomic rearrangements at the interface. The nature and composition of the interlayer(s) are determined by HAADF. Such changes of the nominal GaAs QW can account for the emission observed by CL.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:10958
Deposited By:JNCASR
Deposited On:16 Jul 2011 07:37
Last Modified:16 Jul 2011 07:37

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