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GaN nanorods grown on Si (111) substrates and exciton localization

Park, Young S and Holmes, Mark J and Shon, Y and Yoon, Im Taek and Im, Hyunsik and Taylor, Robert A (2011) GaN nanorods grown on Si (111) substrates and exciton localization. Nanoscale Research Letters, 6 (1). pp. 1-5.

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Official URL: http://www.nanoscalereslett.com/content/6/1/81

Abstract

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (I1). By analyzing the Huang-Rhys parameters as a function of temperature, deduced from the phonon replica intensities, we have found that the excitons are strongly localized in the lower energy tails. The lifetimes of the I1 and I2 transitions were measured to be < 100 ps due to enhanced surface recombination.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:10950
Deposited By:JNCASR
Deposited On:18 Jul 2011 08:51
Last Modified:18 Jul 2011 08:51

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