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Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide

Ahn, Jung-Joon and Jo, Yeong-Deuk and Kim, Sang-Cheol and Lee, Ji-Hoon and Koo, Sang-Mo (2011) Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide. Nanoscale Research Letters, 6 (1). pp. 1-5.

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Official URL: http://www.nanoscalereslett.com/content/6/1/235

Abstract

The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AFM-based local oxidation (AFM-LO) rate on SiC is closely correlated to the atomic planar density values of different crystalline planes (a-plane, 7.45 cm-2; c-plane, 12.17 cm-2; and m-plane, 6.44 cm-2). Specifically, at room temperature and under about 40% humidity with a scan speed of 0.5 μm/s, the height of oxides on a- and m-planes 4H-SiC is 6.5 and 13 nm, respectively, whereas the height of oxides on the c-plane increased up to 30 nm. In addition, the results of AFM-LO with thermally grown oxides on the different plane orientations in SiC are compared.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:10947
Deposited By:JNCASR
Deposited On:18 Jul 2011 08:58
Last Modified:18 Jul 2011 08:58

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