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Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers

Hu, Dongzhi and McPheeters, Claiborne CO and Yu, Edward T and Schaadt, Daniel M (2011) Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers. Nanoscale Research Letters, 6 (1). pp. 1-5.

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A new measure to enhance the performance of InAs quantum dot solar cell is proposed and measured. One monolayer AlAs is deposited on top of InAs quantum dots (QDs) in multistack solar cells. The devices were fabricated by molecular beam epitaxy. In situ annealing was intended to tune the QD density. A set of four samples were compared: InAs QDs without in situ annealing with and without AlAs cap layer and InAs QDs in situ annealed with and without AlAs cap layer. Atomic force microscopy measurements show that when in situ annealing of QDs without AlAs capping layers is investigated, holes and dashes are present on the device surface, while capping with one monolayer AlAs improves the device surface. On unannealed samples, capping the QDs with one monolayer of AlAs improves the spectral response, the open-circuit voltage and the fill factor. On annealed samples, capping has little effect on the spectral response but reduces the short-circuit current, while increasing the open-circuit voltage, the fill factor and power conversion efficiency.

Item Type:Article
Subjects:Material Science > Functional and hybrid materials
Technology > Manufacturing processes for nanotechnology
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:10933
Deposited By:JNCASR
Deposited On:30 Aug 2011 11:38
Last Modified:30 Aug 2011 11:38

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