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Electron cotunneling through doubly occupied quantum dots: effect of spin configuration

Lan, Jian and Sheng, Weidong (2011) Electron cotunneling through doubly occupied quantum dots: effect of spin configuration. Nanoscale Research Letters, 6 (1). pp. 1-6.


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A microscopic theory is presented for electron cotunneling through doubly occupied quantum dots in the Coulomb blockade regime. Beyond the semiclassic framework of phenomenological models, a fully quantum mechanical solution for cotunneling of electrons through a one-dimensional quantum dot is obtained using a quantum transmitting boundary method without any fitting parameters. It is revealed that the cotunneling conductance exhibits strong dependence on the spin configuration of the electrons confined inside the dot. Especially for the triplet configuration, the conductance shows an obvious deviation from the well-known quadratic dependence on the applied bias voltage. Furthermore, it is found that the cotunneling conductance reveals more sensitive dependence on the barrier width than the height.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:10931
Deposited By:JNCASR
Deposited On:14 Sep 2011 05:41
Last Modified:14 Sep 2011 05:41

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