Lan, Jian and Sheng, Weidong (2011) Electron cotunneling through doubly occupied quantum dots: effect of spin configuration. Nanoscale Research Letters, 6 (1). pp. 1-6.
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Official URL: http://www.nanoscalereslett.com/content/6/1/251
Abstract
A microscopic theory is presented for electron cotunneling through doubly occupied quantum dots in the Coulomb blockade regime. Beyond the semiclassic framework of phenomenological models, a fully quantum mechanical solution for cotunneling of electrons through a one-dimensional quantum dot is obtained using a quantum transmitting boundary method without any fitting parameters. It is revealed that the cotunneling conductance exhibits strong dependence on the spin configuration of the electrons confined inside the dot. Especially for the triplet configuration, the conductance shows an obvious deviation from the well-known quadratic dependence on the applied bias voltage. Furthermore, it is found that the cotunneling conductance reveals more sensitive dependence on the barrier width than the height.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanophysics Physical Science > Nano objects Material Science > Nanochemistry Material Science > Nanostructured materials |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Chemistry |
| ID Code: | 10931 |
| Deposited By: | JNCASR |
| Deposited On: | 14 Sep 2011 05:41 |
| Last Modified: | 14 Sep 2011 05:41 |
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