Nano Archive

Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well

Han, Lifen and Zhu, Yonggang and Zhang, Xinhui and Tan, Pingheng and Ni, Haiqiao and Niu, Zhichuan (2011) Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well. Nanoscale Research Letters, 6 (1). pp. 1-5.

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Official URL: http://www.nanoscalereslett.com/content/6/1/84

Abstract

Temperature and carrier density-dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetries have been studied by using time-resolved Kerr rotation technique. The spin relaxation time is measured to be much longer for the symmetrically designed GaAs QW comparing with the asymmetrical one, indicating the strong influence of Rashba spin-orbit coupling on spin relaxation. D'yakonov-Perel' mechanism has been revealed to be the dominant contribution for spin relaxation in GaAs/AlGaAs QWs. The spin relaxation time exhibits non-monotonic-dependent behavior on both temperature and photo-excited carrier density, revealing the important role of non-monotonic temperature and density dependence of electron-electron Coulomb scattering. Our experimental observations demonstrate good agreement with recently developed spin relaxation theory based on microscopic kinetic spin Bloch equation approach.

Item Type:Article
Subjects:Physical Science > Nano objects
Material Science > Nanostructured materials
Material Science > Nanochemistry
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:10922
Deposited By:JNCASR
Deposited On:18 Oct 2011 08:20
Last Modified:18 Oct 2011 08:20

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