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Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

Mashanov, Vladimir and Ulyanov, Vladimir and Timofeev, Vyacheslav and Nikiforov, Aleksandr and Pchelyakov, Oleg and Yu, Ing-Song and Cheng, Henry (2011) Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy. Nanoscale Research Letters, 6 (1). pp. 1-5.

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Official URL: http://www.nanoscalereslett.com/content/6/1/85/abs...

Abstract

The surface morphology of Ge0.96Sn0.04/Si(100) heterostructures grown at temperatures from 250 to 450°C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) ex situ has been studied. The statistical data for the density of Ge0.96Sn0.04 nanodots (ND) depending on their lateral size have been obtained. Maximum density of ND (6 × 1011 cm-2) with the average lateral size of 7 nm can be obtained at 250°C. Relying on the reflection of high energy electron diffraction, AFM, and STM, it is concluded that molecular beam growth of Ge1-xSnx heterostructures with the small concentrations of Sn in the range of substrate temperatures from 250 to 450°C follows the Stranski-Krastanow mechanism. Based on the technique of recording diffractometry of high energy electrons during the process of epitaxy, the wetting layer thickness of Ge0.96Sn0.04 films is found to depend on the temperature of the substrate.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:10910
Deposited By:JNCASR
Deposited On:18 Oct 2011 08:47
Last Modified:18 Oct 2011 08:47

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