Roussel, Manuel and Chen, Wanghua and Talbot, Etienne and Larde, Rodrigue and Cadel, Emmanuel and Gourbilleau, Fabrice and Grandidier, Bruno and Stievenard, Didier and Pareige, Philippe (2011) Atomic scale investigation of silicon nanowires and nanoclusters. Nanoscale Research Letters, 6 (1). pp. 1-6.
Official URL: http://www.nanoscalereslett.com/content/6/1/271
In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in SiNW are investigated and discussed. Silicon nanoclusters are produced by thermal annealing of silicon-rich silicon oxide and silica multilayers. In this process, atom probe tomography (APT) provides accurate information on the silicon nanoparticles and the chemistry of the nanolayers.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanostructured materials
Material Science > Nanochemistry
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Chemistry|
|Deposited On:||18 Oct 2011 08:20|
|Last Modified:||18 Oct 2011 08:20|
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