Zatryb, G and Podhorodecki, A and Misiewicz, J and Cardin, J and Gourbilleau, F (2011) On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals. Nanoscale Research Letters, 6 (1). pp. 1-8.
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Official URL: http://www.nanoscalereslett.com/content/6/1/106
Abstract
The influence of hydrogen rate on optical properties of silicon nanocrystals deposited by sputtering method was studied by means of time-resolved photoluminescence spectroscopy as well as transmission and reflection measurements. It was found that photoluminescence decay is strongly non-single exponential and can be described by the stretched exponential function. It was also shown that effective decay rate probability density function may be recovered by means of Stehfest algorithm. Moreover, it was proposed that the observed broadening of obtained decay rate distributions reflects the disorder in the samples.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanophysics Physical Science > Nano objects Material Science > Nanochemistry Material Science > Nanostructured materials |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics Faculty of Engineering, Science and Mathematics > School of Chemistry |
| ID Code: | 10867 |
| Deposited By: | JNCASR |
| Deposited On: | 20 Oct 2011 10:13 |
| Last Modified: | 20 Oct 2011 10:13 |
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