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On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals

Zatryb, G and Podhorodecki, A and Misiewicz, J and Cardin, J and Gourbilleau, F (2011) On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals. Nanoscale Research Letters, 6 (1). pp. 1-8.

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Official URL: http://www.nanoscalereslett.com/content/6/1/106

Abstract

The influence of hydrogen rate on optical properties of silicon nanocrystals deposited by sputtering method was studied by means of time-resolved photoluminescence spectroscopy as well as transmission and reflection measurements. It was found that photoluminescence decay is strongly non-single exponential and can be described by the stretched exponential function. It was also shown that effective decay rate probability density function may be recovered by means of Stehfest algorithm. Moreover, it was proposed that the observed broadening of obtained decay rate distributions reflects the disorder in the samples.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:10867
Deposited By:JNCASR
Deposited On:20 Oct 2011 10:13
Last Modified:20 Oct 2011 10:13

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