Lanza, Mario and Iglesias, Vanessa and Porti, Marc and Nafria, Montse and Aymerich, Xavier (2011) Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics. Nanoscale Research Letters, 6 (1). pp. 1-9.
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Official URL: http://www.nanoscalereslett.com/content/6/1/108
Abstract
In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanophysics Physical Science > Nano objects Material Science > Nanochemistry Material Science > Nanostructured materials |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Physics Faculty of Engineering, Science and Mathematics > School of Chemistry |
| ID Code: | 10865 |
| Deposited By: | JNCASR |
| Deposited On: | 20 Oct 2011 10:13 |
| Last Modified: | 20 Oct 2011 10:13 |
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