Alvarez, Jose and Ngo, Irène and Gueunier-Farret, Marie-Estelle and Kleider, Jean-Paul and Yu, Linwei and Cabarrocas, Pere Rocai and Perraud, Simon and RouviÃ¨re, Emmanuelle and Celle, Caroline and Mouchet, Céline and Simonato, Jean-Pierre (2011) Conductive-probe atomic force microscopy characterization of silicon nanowire. Nanoscale Research Letters, 6 (1). pp. 1-9.
Official URL: http://www.nanoscalereslett.com/content/6/1/110
The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||20 Oct 2011 10:13|
|Last Modified:||20 Oct 2011 10:13|
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