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Conductive-probe atomic force microscopy characterization of silicon nanowire

Alvarez, Jose and Ngo, Irène and Gueunier-Farret, Marie-Estelle and Kleider, Jean-Paul and Yu, Linwei and Cabarrocas, Pere Rocai and Perraud, Simon and Rouvière, Emmanuelle and Celle, Caroline and Mouchet, Céline and Simonato, Jean-Pierre (2011) Conductive-probe atomic force microscopy characterization of silicon nanowire. Nanoscale Research Letters, 6 (1). pp. 1-9.


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The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:10863
Deposited By:JNCASR
Deposited On:20 Oct 2011 10:13
Last Modified:20 Oct 2011 10:13

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