Xu, Tao and Sulerzycki, Julien and Nys, Philippe Jean and Patriarche, Gilles and Grandidier, Bruno and Stiévenard, Didier (2011) Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy. Nanoscale Research Letters, 6 (1). pp. 1-7.
Official URL: http://www.nanoscalereslett.com/content/6/1/113
We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked difference between the roughnesses of their respective sidewalls. As the investigation of their length dependence on their diameter indicates that the growth of the NWs predominantly proceeds through the diffusion of adatoms from the substrate up along the sidewalls, difference in the sidewall roughness qualitatively explains the length variation measured between both types of NWs. The formation of atomically flat 111 sidewalls on the <110>-oriented Ge NWs accounts for a larger diffusion length.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Chemistry|
|Deposited On:||20 Oct 2011 10:13|
|Last Modified:||20 Oct 2011 10:13|
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