Eriksson, Jens and Roccaforte, Fabrizio and Reshanov, Sergey and Leone, Stefano and Giannazzo, Filippo and LoNigro, Raffaella and Fiorenza, Patrick and Raineri, Vito (2011) Nanoscale characterization of electrical transport at metal/3C-SiC interfaces. Nanoscale Research Letters, 6 (1). pp. 1-5.
Official URL: http://www.nanoscalereslett.com/content/6/1/120
In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using conductive atomic force microscopy allowed demonstrating that the stacking fault is the most pervasive, electrically active extended defect at 3C-SiC(111) surfaces, and it can be electrically passivated by an ultraviolet irradiation treatment. For the Au/3C-SiC Schottky interface, a contact area dependence of the Schottky barrier height (Î¦B) was found even after this passivation, indicating that there are still some electrically active defects at the interface. Improved electrical properties were observed in the case of the Pt/3C-SiC system. In this case, annealing at 500Â°C resulted in a reduction of the leakage current and an increase of the Schottky barrier height (from 0.77 to 1.12 eV). A structural analysis of the reaction zone carried out by transmission electron microscopy [TEM] and X-ray diffraction showed that the improved electrical properties can be attributed to a consumption of the surface layer of SiC due to silicide (Pt2Si) formation. The degradation of Schottky characteristics at higher temperatures (up to 900Â°C) could be ascribed to the out-diffusion and aggregation of carbon into clusters, observed by TEM analysis.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||25 Oct 2011 10:57|
|Last Modified:||25 Oct 2011 10:57|
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