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Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix

Stavarache, Ionel and Lepadatu, Ana-Maria and Gheorghe, Nicoleta G. and Costescu, Ruxandra M. and Stan, George E. and Marcov, Dan and Slav, Adrian and Iordache, Gheorghe and Stoica, Tionica F. and Iancu, Vladimir and Teodorescu, Valentin S. and Teodorescu, Cristian M. and Ciurea, Magdalena Lidia (2011) Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix. Journal of Nanoparticle Research, 13 (1). pp. 221-232.

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Official URL: http://www.springerlink.com/content/f2gx37356t0311...

Abstract

Transmission electron microscopy and X-ray photoelectron spectroscopy analyses are performed to investigate Ge nanoparticles embedded in an amorphous SiO2 matrix. GeSiO thin films are prepared by two methods, sol–gel and radio frequency magnetron sputtering. After the deposition, the sol–gel films are annealed in either N2 (at 1 atm and 800 °C) or H2 (at 2 atm and 500 °C), and the sputtered films in H2 (at 2 atm and 500 °C), to allow Ge segregation. Amorphous Ge-rich nanoparticles (3–7 nm size) are observed in sol–gel films. Crystalline Ge nanoparticles in the high pressure tetragonal phase (10–50 nm size) are identified in the sputtered films. The size of the nanoparticles increases with Ge concentration in the volume of the film. At the film surface, the Ge concentration is much larger that in the volume for both sol–gel and sputtered films. At the same time, at the film surface, only oxidized Ge is observed.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:10562
Deposited By:JNCASR
Deposited On:19 Mar 2011 06:19
Last Modified:19 Mar 2011 06:19

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