Nano Archive

Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

Somaschini, C. and Bietti, S. and Fedorov, A. and Koguchi, N. and Sanguinetti, S. (2010) Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy. Nanoscale Research Letters, 5 (12). pp. 1897-1900.

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Official URL: http://www.nanoscalereslett.com/content/pdf/1556-2...

Abstract

We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:10409
Deposited By:JNCASR
Deposited On:18 Oct 2011 08:19
Last Modified:18 Oct 2011 08:19

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