Somaschini, C. and Bietti, S. and Fedorov, A. and Koguchi, N. and Sanguinetti, S. (2010) Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy. Nanoscale Research Letters, 5 (12). pp. 1897-1900.
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Official URL: http://www.nanoscalereslett.com/content/pdf/1556-2...
Abstract
We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanophysics Physical Science > Nano objects Material Science > Nanochemistry Material Science > Nanostructured materials |
| Divisions: | Faculty of Engineering, Science and Mathematics > School of Chemistry |
| ID Code: | 10409 |
| Deposited By: | JNCASR |
| Deposited On: | 18 Oct 2011 08:19 |
| Last Modified: | 18 Oct 2011 08:19 |
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