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Self-Assembled Local Artificial Substrates of GaAs on Si Substrate

Bietti, S. and Somaschini, C. and Koguchi, N. and Frigeri, C. and Sanguinetti, S. (2010) Self-Assembled Local Artificial Substrates of GaAs on Si Substrate. Nanoscale Research Letters, 5 (12). pp. 1905-1907.

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We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 107 to 109 cm-2. The islands show a standard deviation of base size distribution below 10% and their shape evolves changing the aspect ratio from 0.3 to 0.5 as size increases. Due to their characteristics, these islands are suitable to be used as local artificial substrates for the integration of III-V quantum nanostructures directly on silicon substrate.

Item Type:Article
Subjects:Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:10407
Deposited By:JNCASR
Deposited On:10 May 2011 12:21
Last Modified:10 May 2011 12:21

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