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Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface

Vanacore, Giovanni Maria and Zani, Maurizio and Bollani, Monica and Colombo, Davide and Isella, Giovanni and Osmond, Johann and Sordan, Roman and Tagliaferri, Alberto (2010) Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface. Nanoscale Research Letters, 5 (12). pp. 1921-1925.

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Official URL: http://www.springerlink.com/content/m8836728663h7w...

Abstract

The ordered growth of self-assembled SiGe islands by surface thermal diffusion in ultra high vacuum from a lithographically etched Ge stripe on pit-patterned Si(100) surface has been experimentally investigated. The total surface coverage of Ge strongly depends on the distance from the source stripe, as quantitatively verified by Scanning Auger Microscopy. The size distribution of the islands as a function of the Ge coverage has been studied by coupling atomic force microscopy scans with Auger spectro-microscopy data. Our observations are consistent with a physical scenario where island positioning is essentially driven by energetic factors, which predominate with respect to the local kinetics of diffusion, and the growth evolution mainly depends on the local density of Ge atoms.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
Physical Science > Photonics
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
ID Code:10403
Deposited By:JNCASR
Deposited On:10 May 2011 12:37
Last Modified:10 May 2011 12:37

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