Toujyou, Takashi and Tsukamoto, Shiro (2010) Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth. Nanoscale Research Letters, 5 (12). pp. 1930-1934.
Official URL: http://www.nanoscalereslett.com/content/5/12/1930
Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430Â°C. After 1.5Â ML of the InAs wetting layer (WL) growth by ordinal StranskiâKrastanov dot fabrication procedures, we applied voltage at particular sites on the InAs WL, creating the site where In atoms, which were migrating on the WL, favored to congregate. At 240Â°C, InAs nano dots (width: 20â40Â nm, height: 1.5â2.0Â nm) were fabricated. At 430Â°C, InAs nano dots (width: 16â20Â nm, height: 0.75â1.5Â nm) were also fabricated. However, these dots were remained at least 40Â s and collapsed less than 1000Â s. Then, we fabricated InAs nano dots (width: 24â150Â nm, height: 2.8â28Â nm) at 300Â°C under In and As4 irradiations. These were not collapsed and considered to high crystalline dots.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||18 Oct 2011 08:20|
|Last Modified:||18 Oct 2011 08:20|
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