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Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth

Toujyou, Takashi and Tsukamoto, Shiro (2010) Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth. Nanoscale Research Letters, 5 (12). pp. 1930-1934.

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Official URL: http://www.nanoscalereslett.com/content/5/12/1930

Abstract

Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430°C. After 1.5 ML of the InAs wetting layer (WL) growth by ordinal Stranski–Krastanov dot fabrication procedures, we applied voltage at particular sites on the InAs WL, creating the site where In atoms, which were migrating on the WL, favored to congregate. At 240°C, InAs nano dots (width: 20–40 nm, height: 1.5–2.0 nm) were fabricated. At 430°C, InAs nano dots (width: 16–20 nm, height: 0.75–1.5 nm) were also fabricated. However, these dots were remained at least 40 s and collapsed less than 1000 s. Then, we fabricated InAs nano dots (width: 24–150 nm, height: 2.8–28 nm) at 300°C under In and As4 irradiations. These were not collapsed and considered to high crystalline dots.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:10401
Deposited By:JNCASR
Deposited On:18 Oct 2011 08:20
Last Modified:18 Oct 2011 08:20

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