Anufriev, Yu.V. and Kondratyev, P.K. and Rachnikov, D.A. and Zenova, E.V. (2010) Manufacturing Flow of Nonvolatile Phase Change Memory Nanoscale Cell with Application of Dual-Beam Research System NOVANanoLab600. Journal of NANO and MICROSYSTEM TECHNIQUE (11).
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Official URL: http:// www.microsystems.ru
Abstract
Possible fabrication technique of phase change nonvolatile RAM array prototype is described. Dual-beam research system N0VANanoLab600 application as main processing equipment was considered. Path flow and flow features applied in this paper are expounded. Keywords: nonvolatile nanoscale memory, phase RAM, dual-beam, FEI
| Item Type: | Article |
|---|---|
| Additional Information: | Full text is in Russian |
| ID Code: | 10326 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 08 Dec 2010 23:41 |
| Last Modified: | 09 Dec 2010 09:29 |
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