Abramov, I.I. (2010) Problems and Principles of Physics and Simulation of Micro- and Nanoelectronics Devices. VIII. Nano-scale MOSFETs. Journal of NANO and MICROSYSTEM TECHNIQUE (10).
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Official URL: http:// www.microsystems.ru
Abstract
The models of silicon nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) were analyzed. The perspectives of electronics beyond MOSFET "era" were considered. Keywords: nanotransistors, metal-oxide-semiconductor, nanoelectronics
| Item Type: | Article |
|---|---|
| Additional Information: | Full text is in Russian |
| ID Code: | 10316 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 08 Dec 2010 23:41 |
| Last Modified: | 09 Dec 2010 09:29 |
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