Nano Archive

Problems and Principles of Physics and Simulation of Micro- and Nanoelectronics Devices. VIII. Nanoscale MOSFETs

Abramov, I.I. (2010) Problems and Principles of Physics and Simulation of Micro- and Nanoelectronics Devices. VIII. Nanoscale MOSFETs. Journal of NANO and MICROSYSTEM TECHNIQUE (9).

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Official URL: http:// www.microsystems.ru

Abstract

The models of silicon nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) were analyzed. The perspectives of electronics beyond MOSFET "era" were considered. Keyword: nanotransistors, metal-oxide-semiconductor, nanoelectronics

Item Type:Article
Additional Information:Full text is in Russian
ID Code:10307
Deposited By:Prof. Alexey Ivanov
Deposited On:08 Dec 2010 23:41
Last Modified:09 Dec 2010 09:29

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