Abramov, I.I. (2010) Problems and Principles of Physics and Simulation of Micro- and Nanoelectronics Devices. VIII. Nanoscale MOSFETs. Journal of NANO and MICROSYSTEM TECHNIQUE (9).
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The models of silicon nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) were analyzed. The perspectives of electronics beyond MOSFET "era" were considered. Keyword: nanotransistors, metal-oxide-semiconductor, nanoelectronics
|Additional Information:||Full text is in Russian|
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||08 Dec 2010 23:41|
|Last Modified:||09 Dec 2010 09:29|
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