Hatukaev, H.M. and Shautsukov, A.G. (2010) Application of Processes Ion Doping 2-Drifts ADD Diodes with a Flat and Step Profile Doping. Journal of NANO and MICROSYSTEM TECHNIQUE (9).
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Abstract
In work it is offered to obtain 2-drifts of structure silicon ADD with using epitaxial normalization in reactor of the lowered pressure, multiple ion doping, implantation of doping impurity through a tape photon annealing ion doped later. The application of the developed technology provides serial release of a sort perspective 2-drifts ADD mm-range. Keywords: perspective 2-drifts ADD mm-range, ion doping, method epitaxial normalization
| Item Type: | Article |
|---|---|
| Additional Information: | Full text is in Russian |
| ID Code: | 10304 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 08 Dec 2010 23:41 |
| Last Modified: | 09 Dec 2010 09:29 |
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