Hatukaev, H.M. and Shautsukov, A.G. (2010) Application of Processes Ion Doping 2-Drifts ADD Diodes with a Flat and Step Profile Doping. Journal of NANO and MICROSYSTEM TECHNIQUE (9).
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In work it is offered to obtain 2-drifts of structure silicon ADD with using epitaxial normalization in reactor of the lowered pressure, multiple ion doping, implantation of doping impurity through a tape photon annealing ion doped later. The application of the developed technology provides serial release of a sort perspective 2-drifts ADD mm-range. Keywords: perspective 2-drifts ADD mm-range, ion doping, method epitaxial normalization
|Additional Information:||Full text is in Russian|
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||08 Dec 2010 23:41|
|Last Modified:||09 Dec 2010 09:29|
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