Mustafaev, A.G. and Mustafaev, A.G. and Mustafaev, G.A. (2010) Influence on Submicron Soi Mosfets Characteristics. Journal of NANO and MICROSYSTEM TECHNIQUE (7).
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Abstract
In work modeling of SOI MOSFET with double, triple and ring gate is spent. SOI MOSFET subthreshold characteristics dependence on geometry of body, channel length and width, gate oxide thickness and channel doping level is investigated. Keywords: silicon on insulator, modeling, MOSFET
| Item Type: | Article |
|---|---|
| Additional Information: | Full text is in Russian |
| ID Code: | 10287 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 08 Dec 2010 23:40 |
| Last Modified: | 09 Dec 2010 09:29 |
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