Nano Archive

An Effect of Crystallization Temperature on Ferroelectric Properties of PZT Films

Seregin, D.S. (2010) An Effect of Crystallization Temperature on Ferroelectric Properties of PZT Films. Journal of NANO and MICROSYSTEM TECHNIQUE (7).

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Abstract

An effect of crystallization temperature on ferroelectric properties of PZT films prepared by chemical solution deposition is studied. The samples annealed at 600—700 *C have typical hysteresis loops and CV characteristics. With the increase of crystallization temperature the remanent polarization, squareness of hysteresis loops, and leakage current are decreased, whereas breakdown voltage is somewhat increased. Keywords: sol-gel, films, ferroelectric, crystallization, annealing, hysteresis

Item Type:Article
Additional Information:Full text is in Russian
ID Code:10280
Deposited By:Prof. Alexey Ivanov
Deposited On:08 Dec 2010 23:40
Last Modified:09 Dec 2010 09:29

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