Seregin, D.S. (2010) An Effect of Crystallization Temperature on Ferroelectric Properties of PZT Films. Journal of NANO and MICROSYSTEM TECHNIQUE (7).
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Abstract
An effect of crystallization temperature on ferroelectric properties of PZT films prepared by chemical solution deposition is studied. The samples annealed at 600â700 *C have typical hysteresis loops and CV characteristics. With the increase of crystallization temperature the remanent polarization, squareness of hysteresis loops, and leakage current are decreased, whereas breakdown voltage is somewhat increased. Keywords: sol-gel, films, ferroelectric, crystallization, annealing, hysteresis
| Item Type: | Article |
|---|---|
| Additional Information: | Full text is in Russian |
| ID Code: | 10280 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 08 Dec 2010 23:40 |
| Last Modified: | 09 Dec 2010 09:29 |
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