Tarnavsky, G.A. (2010) Doping in Nanocolumns of Surface Relief of Silicon Wafer. Journal of NANO and MICROSYSTEM TECHNIQUE (6).
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Abstract
The investigation of technological process of implantation of doping impurities of acceptor and donor types (boron, phosphorus and arsenic) in silicon wafer with complicated surface nanorelief was conducted by computer simulation. Keywords: computer simulation, doping in silicon, implantation, donor and acceptor impurities, relief nano-columns
| Item Type: | Article |
|---|---|
| Additional Information: | Full text is in Russian |
| ID Code: | 10274 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 08 Dec 2010 23:40 |
| Last Modified: | 09 Dec 2010 09:29 |
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