Gurin, N.T. and Korneev, I.V. and Novikov, S.G. (2010) Simulation and Investigation Negation with the Transfer N-Shaped Current-Voltage Characteristics. Journal of NANO and MICROSYSTEM TECHNIQUE (4).
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The paper presents a method of implementing embedded negatrons protection from current overload in the control circuit based on a combination of two elements with N-shaped volt-current characteristic. The features of appliances sold by this method are the existence of static output and transfer N-shaped CVC, as well as one or several chains of positive feedback, which allows to Limit the operating input current and output voltage within specified limits. Using this method will create a semiconductor structure with built-in protection against current overload in the control and load circuits. Keywords: negatrons, negative resistance, the transfer characteristic
|Additional Information:||Full text is in Russian|
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||08 Dec 2010 23:40|
|Last Modified:||09 Dec 2010 09:29|
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