Kulchitsky, N.A. and Melnikov, Ð.Ð. and Nesmelov, S.N. and Voitsekhovskii, A.V. (2010) Ge/Si Quantum Dot Detectors for an Infrared Range. Journal of NANO and MICROSYSTEM TECHNIQUE (4).
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Questions of development of new types detectors on Ge/Si quantum dot for an infrared range are considered: detectors on a basis p-i-n structures, bipolar and field the phototransistor on the basis of quantum dot Ge/Si. Potential advantages of new types of detectors can be used at the further development of growth technologies of quantum dot with the set sizes, the form and density. Keywords: infrared detectors, quantum dots, quantum well
|Additional Information:||Full text is in Russian|
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||08 Dec 2010 23:40|
|Last Modified:||09 Dec 2010 09:29|
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