Kulchitsky, N.A. and Melnikov, Ð.Ð. and Nesmelov, S.N. and Voitsekhovskii, A.V. (2010) Ge/Si Quantum Dot Detectors for an Infrared Range. Journal of NANO and MICROSYSTEM TECHNIQUE (4).
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Abstract
Questions of development of new types detectors on Ge/Si quantum dot for an infrared range are considered: detectors on a basis p-i-n structures, bipolar and field the phototransistor on the basis of quantum dot Ge/Si. Potential advantages of new types of detectors can be used at the further development of growth technologies of quantum dot with the set sizes, the form and density. Keywords: infrared detectors, quantum dots, quantum well
| Item Type: | Article |
|---|---|
| Additional Information: | Full text is in Russian |
| ID Code: | 10251 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 08 Dec 2010 23:40 |
| Last Modified: | 09 Dec 2010 09:29 |
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