Nano Archive

Simulation of Metallic and Semiconductor Single-Electron Devices with Including Spatial Quantization on Islands

Abramov, I.I. and Baranov, A.L. (2010) Simulation of Metallic and Semiconductor Single-Electron Devices with Including Spatial Quantization on Islands. Journal of NANO and MICROSYSTEM TECHNIQUE (3).

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Official URL: http:// www.microsystems.ru

Abstract

Physical model of single-electron devices with spatial quantization on islands was proposed. It was shown that effect is important on IV-characteristics of devices not only for small islands but with increasing of islands quantity, applied voltages and decreasing of temperature. Keywords: single-electron devices, spatial quantization

Item Type:Article
Additional Information:Full text is in Russian
ID Code:10246
Deposited By:Prof. Alexey Ivanov
Deposited On:08 Dec 2010 23:40
Last Modified:09 Dec 2010 09:29

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