Abramov, I.I. and Baranov, A.L. (2010) Simulation of Metallic and Semiconductor Single-Electron Devices with Including Spatial Quantization on Islands. Journal of NANO and MICROSYSTEM TECHNIQUE (3).
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Physical model of single-electron devices with spatial quantization on islands was proposed. It was shown that effect is important on IV-characteristics of devices not only for small islands but with increasing of islands quantity, applied voltages and decreasing of temperature. Keywords: single-electron devices, spatial quantization
|Additional Information:||Full text is in Russian|
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||08 Dec 2010 23:40|
|Last Modified:||09 Dec 2010 09:29|
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