Matiushkin, I.V. and Zaitsev, N.A. (2010) The Features of Gate System Formation in Nanodevices. Journal of NANO and MICROSYSTEM TECHNIQUE (2).
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http:// www.microsystems.ru
The properties that the gate system in nanodeivices should possess, are specified. It is shown that the deformation of [SiO4]4- tetrahedrons leads to formation of dipoles on the SiâSiO2 interface. This effect is necessary for conÂsidering at the estimation of nanotransistor electric properties. Keywords: silicon dioxide, gate dielectric, transition layer, permittivity, nano MOSFET.
|Additional Information:||Full text is in Russian|
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||08 Dec 2010 23:40|
|Last Modified:||09 Dec 2010 09:29|
Repository Staff Only: item control page