Matiushkin, I.V. and Zaitsev, N.A. (2010) The Features of Gate System Formation in Nanodevices. Journal of NANO and MICROSYSTEM TECHNIQUE (2).
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Abstract
The properties that the gate system in nanodeivices should possess, are specified. It is shown that the deformation of [SiO4]4- tetrahedrons leads to formation of dipoles on the SiâSiO2 interface. This effect is necessary for conÂsidering at the estimation of nanotransistor electric properties. Keywords: silicon dioxide, gate dielectric, transition layer, permittivity, nano MOSFET.
| Item Type: | Article |
|---|---|
| Additional Information: | Full text is in Russian |
| ID Code: | 10235 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 08 Dec 2010 23:40 |
| Last Modified: | 09 Dec 2010 09:29 |
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