Nano Archive

The Features of Gate System Formation in Nanodevices

Matiushkin, I.V. and Zaitsev, N.A. (2010) The Features of Gate System Formation in Nanodevices. Journal of NANO and MICROSYSTEM TECHNIQUE (2).

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL: http:// www.microsystems.ru

Abstract

The properties that the gate system in nanodeivices should possess, are specified. It is shown that the deformation of [SiO4]4- tetrahedrons leads to formation of dipoles on the Si—SiO2 interface. This effect is necessary for con­sidering at the estimation of nanotransistor electric properties. Keywords: silicon dioxide, gate dielectric, transition layer, permittivity, nano MOSFET.

Item Type:Article
Additional Information:Full text is in Russian
ID Code:10235
Deposited By:Prof. Alexey Ivanov
Deposited On:08 Dec 2010 23:40
Last Modified:09 Dec 2010 09:29

Repository Staff Only: item control page