Ignat'eva, E.V. and Mikhailov, Yu.A. and Timoshenkov, S.P. (2010) On the Structural Design of Membrane with Solid Center of Silicon Pressure Strain Transducer in Range from 0,025 to 25 MPa. Journal of NANO and MICROSYSTEM TECHNIQUE (2).
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The article describes a design method of membrane with solid center of silicon pressure strain transducer. It is shown that the pressure range from 0,025 to 25 MPa with preset output voltage and non-linearity less than 0,2 % is realized on 4x4 mm size chip when using membrane two sizes with rectangular solid center. Keywords: silicon pressure strain transducer, IPD chip, membrane with solid center.
|Additional Information:||Full text is in Russian|
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||08 Dec 2010 23:40|
|Last Modified:||09 Dec 2010 09:29|
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