Nano Archive

On the Structural Design of Membrane with Solid Center of Silicon Pressure Strain Transducer in Range from 0,025 to 25 MPa

Ignat'eva, E.V. and Mikhailov, Yu.A. and Timoshenkov, S.P. (2010) On the Structural Design of Membrane with Solid Center of Silicon Pressure Strain Transducer in Range from 0,025 to 25 MPa. Journal of NANO and MICROSYSTEM TECHNIQUE (2).

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Official URL: http:// www.microsystems.ru

Abstract

The article describes a design method of membrane with solid center of silicon pressure strain transducer. It is shown that the pressure range from 0,025 to 25 MPa with preset output voltage and non-linearity less than 0,2 % is realized on 4x4 mm size chip when using membrane two sizes with rectangular solid center. Keywords: silicon pressure strain transducer, IPD chip, membrane with solid center.

Item Type:Article
Additional Information:Full text is in Russian
ID Code:10232
Deposited By:Prof. Alexey Ivanov
Deposited On:08 Dec 2010 23:40
Last Modified:09 Dec 2010 09:29

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