Nano Archive

Modeling of the Diffusion Process in Semiconductor Branch of Thermoelectrical Unit Through the Barrier Layer

Belyaeva, A.O. and Solntsev, V.A. (2010) Modeling of the Diffusion Process in Semiconductor Branch of Thermoelectrical Unit Through the Barrier Layer. Journal of NANO and MICROSYSTEM TECHNIQUE (1).

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Official URL: http:// www.microsystems.ru

Abstract

The two-step mathematical modeling of the diffusion process, which is running in thermo-electrical unit, was made. Mathematical model of the materials diffusion process in multi-layer structure semiconducting branch without layers defects was developed on the first step. And model with defects of layers was developed on the second step. The results of the mathematical modeling are given here, they shows us, that the defects of barrier layers have influence on diffusion velocity much more than the type of barrier layer material. Keywords: mathematical modeling, thermoelectricity, thermo-electrical units, semiconductors, Peltier effect, bismuth telluride, reliability, diffusion.

Item Type:Article
Additional Information:Full text is in Russian
ID Code:10222
Deposited By:Prof. Alexey Ivanov
Deposited On:08 Dec 2010 23:40
Last Modified:09 Dec 2010 09:29

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