Belyaeva, A.O. and Solntsev, V.A. (2010) Modeling of the Diffusion Process in Semiconductor Branch of Thermoelectrical Unit Through the Barrier Layer. Journal of NANO and MICROSYSTEM TECHNIQUE (1).
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Official URL: http:// www.microsystems.ru
Abstract
The two-step mathematical modeling of the diffusion process, which is running in thermo-electrical unit, was made. Mathematical model of the materials diffusion process in multi-layer structure semiconducting branch without layers defects was developed on the first step. And model with defects of layers was developed on the second step. The results of the mathematical modeling are given here, they shows us, that the defects of barrier layers have influence on diffusion velocity much more than the type of barrier layer material. Keywords: mathematical modeling, thermoelectricity, thermo-electrical units, semiconductors, Peltier effect, bismuth telluride, reliability, diffusion.
| Item Type: | Article |
|---|---|
| Additional Information: | Full text is in Russian |
| ID Code: | 10222 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 08 Dec 2010 23:40 |
| Last Modified: | 09 Dec 2010 09:29 |
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