Tarnavsky, G.A. (2010) Implantation of Doping Impurities in Silicon Substrate with Unplanar Surface. Journal of NANO and MICROSYSTEM TECHNIQUE (1).
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The investigation of technological process parameters effect (sighting angle and energy of implantation) on concentrations distributions of doping impurities in silicon substrate are conducted by computer simulation. Keywords: computer simulation, doping in silicon, implantation, donor and acceptor impurities.
|Additional Information:||Full text is in Russian|
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||08 Dec 2010 23:40|
|Last Modified:||09 Dec 2010 09:29|
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