Nano Archive

Implantation of Doping Impurities in Silicon Substrate with Unplanar Surface

Tarnavsky, G.A. (2010) Implantation of Doping Impurities in Silicon Substrate with Unplanar Surface. Journal of NANO and MICROSYSTEM TECHNIQUE (1).

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Official URL: http:// www.microsystems.ru

Abstract

The investigation of technological process parameters effect (sighting angle and energy of implantation) on concentrations distributions of doping impurities in silicon substrate are conducted by computer simulation. Keywords: computer simulation, doping in silicon, implantation, donor and acceptor impurities.

Item Type:Article
Additional Information:Full text is in Russian
ID Code:10221
Deposited By:Prof. Alexey Ivanov
Deposited On:08 Dec 2010 23:40
Last Modified:09 Dec 2010 09:29

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