Amelichev, V.V. and Fedorov, R.A. and Godovitsyn, I.V. and Maltsev, P.P. and Saikin, D.A. (2009) Characterization of SOI Wafer Based Experimental MEMS Accelerometer. Journal of NANO and MICROSYSTEM TECHNIQUE (12).
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A technology for fabrication of MEMS-transducers on SOI-wafers is developed. A sample differential capacitive MEMS-accelerometer is designed with its parameters evaluated using analytical expressions and finite-element modeling. Using developed technology the designed MEMS-accelerometer is fabricated. Pull-in voltage and sensitivity of the MEMS-accelerometer are measured and good agreement with calculated values is demonÂstrated. Approaches for improving of parameters of the MEMS-accelerometer are proposed. Keywords: MEMS, SOI-wafer, accelerometer.
|Additional Information:||Full text is in Russian|
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||08 Dec 2010 23:40|
|Last Modified:||09 Dec 2010 09:29|
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