Nano Archive

The Influence of an Adsorption on Capacitive Properties of Nanoporous Silicon

Belobrovaya, О.Ja. and Bilenko, D.I. and Galushka, V.V. and Jarkova, Е.А. (2009) The Influence of an Adsorption on Capacitive Properties of Nanoporous Silicon. Journal of NANO and MICROSYSTEM TECHNIQUE (10).

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Official URL: http:// www.microsystems.ru

Abstract

The capacitance properties of the diode structures on a basis of partially oxidized porous silicon in a range of frequencies of 10—106 Hz are investigated under normal conditions and at adsorption of polar molecules. It is shown, that for samples with barrier Shottky in a low-frequency range the increase of capacity at adsorption ex­ceeds 102 times. It is pointed on the possibility of capacitance sensors creation on the base of oxidized nano­porous silicon. Keywords: nanostructures partially oxidized porous silicon, capacity, conductivity, adsorption, frequency de­pendence, sensor.

Item Type:Article
Additional Information:Full text is in Russian
ID Code:10197
Deposited By:Prof. Alexey Ivanov
Deposited On:08 Dec 2010 23:39
Last Modified:09 Dec 2010 09:29

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