Belobrovaya, Ð.Ja. and Bilenko, D.I. and Galushka, V.V. and Jarkova, Ð.Ð. (2009) The Influence of an Adsorption on Capacitive Properties of Nanoporous Silicon. Journal of NANO and MICROSYSTEM TECHNIQUE (10).
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Abstract
The capacitance properties of the diode structures on a basis of partially oxidized porous silicon in a range of frequencies of 10â106 Hz are investigated under normal conditions and at adsorption of polar molecules. It is shown, that for samples with barrier Shottky in a low-frequency range the increase of capacity at adsorption exÂceeds 102 times. It is pointed on the possibility of capacitance sensors creation on the base of oxidized nanoÂporous silicon. Keywords: nanostructures partially oxidized porous silicon, capacity, conductivity, adsorption, frequency deÂpendence, sensor.
| Item Type: | Article |
|---|---|
| Additional Information: | Full text is in Russian |
| ID Code: | 10197 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 08 Dec 2010 23:39 |
| Last Modified: | 09 Dec 2010 09:29 |
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