Nano Archive

Radiation Effects in Phase-Change Memory Integrated Circuits on Chalcogenide Glasses

Aleksandrov, P.A. and Baranova, E.K. and Baranova, I.V. and Budaragin, V.V. and Litvinov, V.L. (2009) Radiation Effects in Phase-Change Memory Integrated Circuits on Chalcogenide Glasses. Journal of NANO and MICROSYSTEM TECHNIQUE (10).

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Official URL: http:// www.microsystems.ru

Abstract

In the present work are considered and analyzed data on the influence of irradiation on the phase-change memory. We have examined the parameters of material Ge2Sb2Te5 (GST) and memory cells based on it. Radiation effects in the GST were estimated. The results obtained are compared with available published experimental data on radiation hardness of memory cells and integrated circuits created on the basis of chalcogenide materials with different composition. Keywords: phase-change memory, chalcogenide glasses, GST, radiation hardness.

Item Type:Article
Additional Information:Full text is in Russian
ID Code:10194
Deposited By:Prof. Alexey Ivanov
Deposited On:08 Dec 2010 23:39
Last Modified:09 Dec 2010 09:29

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